Tip Avalanche Photodiode—A New Generation Silicon Photomultiplier Based on Non-Planar Technology

Application of CMOS Technology to Silicon Photomultiplier Sensors

We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon ph...

The Digital Silicon Photomultiplier

The Silicon Photomultipliers (SiPMs) are the new step in the development of the mod‐ ern detection structures in the area of low photon flux detection with a unique capa‐ bility of detection up to the single photons. The Silicon Photomultiplier intrinsically represents a digital signal source on the elementary cell level. The materials and tech‐ nology of SiPMs are consistent with the modern el...

A time-of-flight detector based on silicon avalanche diodes

J.A. Hauger a, Y. Choi a, A.S . Hirsch ", R.P . Scharenberg a, B.C . Stringfellow a, M.L . Tincknell *,a, N.T . Porile b , G. Rai c, J . Girbarino d , R.J . McIntyre d Department of Physics, Purdue University, West Lafayette, IN 47907-1396, USA n Department of Chemistry, Purdue University, West Lafayette, IN 47907, USA Nuclear Sei. Diu, Lawrence Berkeley Laboratory, Berkeley, CA 94720, USA d Op...

A large area, silicon photomultiplier-based PET detector module.

The introduction of silicon photomultipliers (SiPM) has facilitated construction of compact, efficient and magnetic field-hardened positron emission tomography (PET) scanners. To take full advantage of these devices, methods for using them to produce large field-of-view PET scanners are needed. In this investigation, we explored techniques to combine two SiPM arrays to form the building block f...

Timing optimization of a H-tree based digital silicon photomultiplier